Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same

ABSTRACT

A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.

This a divisional of application Ser. No. 08/044,064 filed Apr. 6, 1993now U.S. Pat. No. 5,474,616.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to a method for rinsing plate shapedarticles, such as semiconductor wafers, particles and masks used inproduction of semiconductor devices, and to a cleaning bath and acleaning equipment used in the method for rinsing the plate-shapedarticles.

(2) Description of the Related Art

In, for example, a production process of a semiconductor device, aftersemiconductor wafers are treated with chemicals, the semiconductorwafers are rinsed using, for example, pure water. In particular, in arinsing process to be performed immediately before a heat treatmentprocess, or a CVD process, small particles must be completely removedfrom the surfaces of the semiconductor wafers with the metal impurity.

The semiconductor wafers are conventionally rinsed as follows.

Semiconductor wafers are set one by one in supporting grooves arrangedat predetermined intervals in a carrier. The carrier in which thesemiconductor wafers are set is immersed in cleaner liquid filling acleaning bath, so that a plurality of semiconductor wafers are rinsed inone lot in the cleaning bath. In addition, a rinsing method has beenalso proposed in which edges of a plurality of semiconductor wafers areheld by a robot hanger in one lot, the semiconductor wafers held by therobot hanger being then immersed in a cleaner liquid so as to be rinsed.

In the above method in which the semiconductor wafers set in the carrierare rinsed, each of the semiconductor wafers 10 is set in a supportinggroove 11a formed in the carrier 11, as shown in FIG. 1(a). When thecarrier 11 in which each of the semiconductor wafers 10 are set in thesupporting groove 11a in the manner as shown in FIG. 1(a) istransported, for example, from a chemical bath to a cleaning bath, anedge of each of the semiconductor wafers 10 vibrates due to thevibration of the carrier 11 in the transportation as shown in FIG. 1(b).In a case where the edge of each of the semiconductor wafers 10 vibratesin the supporting groove 11a, particles are generated. When the carrier11 is formed of fluoroplastics softer than material (e.g. silicon)forming the semiconductor wafers, powder of the fluoroplastics isgenerated as the particles. When material formed of the carrier 11 isharder than silicon forming the semiconductor wafer, powder of thesilicon is generated as the particles. These particles collect in thesupporting grooves 11a.

When the carrier is brought into still water and the supporting groove11a reaches the surface S of the still water in the above state wherethe particles have collected in the supporting groove 11a of the carrier11, the particles P collected in the supporting groove 11a float and aredispersed on the surface S of the still water, as shown in FIG. 2(a).When the carrier is further put under the still water, the particles Pfloating on the surface S of the still water are drawn toward thesurfaces of each of the semiconductor wafers 10 as shown in FIG. 2(b).Thus, when the carriage 11 is pulled up from the still water, theparticles adhere to the surfaces of each of the semiconductor wafers 10.In a case where the semiconductor wafers 10 are treated withhydrofluoric acid, the surfaces of each of the semiconductor wafers 10have a hydrophobic property. In this case, it is particularly easy forthe particles to adhere to the surfaces of each of the semiconductorwafers 10.

In a case where a plurality of semiconductor wafers whose edges are heldby the robot hanger 5 is immersed in the cleaning liquid so as to berinsed as shown in FIG. 3, particles are generated at portions at whichhanger arms 5a, 5b and 5c supporting the semiconductor wafers are incontact with the edge of the semiconductor wafers 10 as shown in FIG. 4.

In an actual cleaning equipment, still water is not used for rinsing thesemiconductor wafers. That is, the cleaning liquid (e.g. the pure water)100 is jetted from a pipe provided on a bottom surface of a cleaningbath 20, as shown in FIGS. 5 and 6. In a state where the cleaning liquid100 overflows from the cleaning bath 20, the semiconductor wafers 10supported by, for example, the robot hanger 5, are immersed in thecleaning liquid 100. When the cleaning liquid 100 is jetted from thepipe 12 on the bottom surface of the cleaning bath 20 and the cleaningliquid 100 overflows from the cleaning bath 20, streams are formed onthe surface of the cleaning liquid 100 as shown in FIG. 7. That is,streams generated in the circumference of the cleaning bath 20 uniformlytravel toward the outside thereof, but streams generated in the middleof the surface of the cleaning liquid 20 are randomly directed. When thesemiconductor wafers 10 are carried into the cleaning liquid in thisstate, the particles floating on the surface of the cleaning liquid 100as described above stay on the surface of the cleaning liquid 100 for along time. As a result, when the semiconductor wafers 10 are pulled upfrom the cleaning liquid 100 after immersing the semiconductor wafers 10in the cleaning liquid 100, a probability that the particles floating onthe surface of the cleaning liquid 100 adhere to the surfaces of each ofthe semiconductor wafers 10 increases. Thus, the particles are notcompletely removed from the semiconductor wafers 10.

SUMMARY OF THE INVENTION

Accordingly, a general object of the present invention is to provide anovel and useful method for rinsing plate-shaped articles and a cleaningbath and a cleaning equipment used in the method in which method, bathand equipment the disadvantages of the aforementioned prior art areeliminated.

A more specific object of the present invention is to provide a methodfor rinsing plate-shaped articles such as the semiconductor wafers inwhich method particles floating on the surface of a cleaning liquid in acleaning bath can be made to flow out from the cleaning bath as soon aspossible.

The above objects of the present invention are achieved by a method forrinsing a plate-shaped article immersed in a cleaning liquid filling acleaning bath having an overflow surface through which the cleaningliquid flows out, the method comprising the steps of: (a) formingstreams mostly going away from a predetermined plane approximatelyperpendicular to the overflow surface; and (b) bringing the plate-shapedarticle into the cleaning liquid having the stream formed by the step(a) maintaining a state where the plate-shaped article intersects thepredetermined plane and the surfaces of the plate-shaped article areapproximately parallel to the formed streams on the surface of thecleaning liquid, which stream are mostly directed away from thepredetermined plane on the surface of the cleaning liquid.

Another object of the present invention is to provide a cleaning bathused in the above method.

The objects of the present invention is achieved by a cleaning bath usedfor rinsing a plate-shaped article comprising: a bath having anoverflowing surface through which a cleaning liquid flows out; andstream forming means for forming streams on a surface of the cleaningliquid filling the bath, the formed streams being directed away from apredetermined plane alternatively perpendicular to the overflowingsurface of the bath.

A further object of the present invention is to provide a cleaningequipment used in the above method.

The object of the present invention is achieved by a cleaning equipmentfor rinsing a plate-shaped article comprising: a cleaning bathcomprising: a bath having an overflowing surface through which acleaning liquid flows out; and stream forming means for forming streamson a surface of the cleaning liquid filling the bath, the streams beingdirected away from a predetermined plane alternatively perpendicular tothe overflowing surface of the bath; and means for bringing theplate-shaped article into the cleaning liquid in the cleaning bath whilemaintaining a state where the plate-shaped article intersects thepredetermined plane and where the surfaces of the plate-shaped articleare approximately parallel to the streams formed by the stream formingmeans.

According to the present invention, the plate-shaped article is broughtinto the cleaning liquid having the surface on which the streams aremainly directed away from the predetermined plane perpendicular to theoverflowing surface maintaining a state where the plate-shaped articleintersects the predetermined plane and the surfaces of the plate-shapedarticle are approximately parallel to the streams mostly being directedaway from the predetermined plane on the surface of the cleaning liquid.Thus, particles floating on the surface of the cleaning liquid rapidlyflow out from the cleaning bath together with the stream. As a result,there are almost no particles on the surface of the plate-shaped articlerinsed in such a bath.

Additional objects, features and advantages of the present inventionwill become apparent from the following detailed description when readin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a structure in which a semiconductorwafer is supported by a carrier.

FIG. 2 is a diagram illustrating a state in which the semiconductorwafer set in the carrier is brought into still water.

FIGS. 3 and 4 are diagrams illustrating semiconductor wafers supportedby a robot hanger.

FIGS. 5 and 6 are diagrams illustrating a conventional method forrinsing the semiconductor wafers.

FIG. 7 is a diagram illustrating streams generated on the surface ofcleaning water in a cleaning bath in a case where the semiconductorwafers are rinsed in accordance with the conventional method.

FIG. 8 is a diagram illustrating a principle of a rinsing methodaccording to the present invention.

FIG. 9 is a diagram illustrating an outline of a cleaning equipment usedin a rinsing method according to an embodiment of the present invention.

FIG. 10 is a diagram illustrating streams formed on the surface of acleaning liquid.

FIGS. 11, 12, 13 and 14 are diagrams illustrating a procedure forrinsing semiconductor wafers in accordance with the rinsing methodaccording to the embodiment of the present invention.

FIG. 15 is a perspective view illustrating a first example of a jettingmechanism for jetting the cleaning liquid.

FIGS. 16(a), (b) and (c) are diagrams illustrating a second example of ajetting mechanism for jetting the cleaning liquid.

FIGS. 17(a) and (b) are diagrams illustrating a third example of ajetting mechanism for jetting the cleaning liquid.

FIGS. 18(a) and (b) are diagrams illustrating a fourth example of ajetting mechanism for jetting the cleaning liquid.

FIGS. 19(a) and (b) are diagrams illustrating a fifth example of ajetting mechanism for jetting the cleaning liquid.

FIGS. 20 and 21 are diagrams illustrating other embodiment of thecleaning bath according to the present invention.

FIG. 22 is a diagram illustrating a jetting pressure distribution of thecleaning liquid in the cleaning bath shown in FIG. 21.

FIG. 23 is a diagram illustrating another embodiment of the cleaningbath according to the present invention.

FIGS. 24 and 25 are diagram illustrating jetting pressure distributionsof the cleaning liquid in the cleaning bath shown in FIG. 16.

FIGS. 26 and 27 are diagrams illustrating an example of a jettingmechanism of the cleaning liquid.

FIG. 28 is a diagram illustrating an operation of the jetting mechanismshown in FIGS. 19 and 20.

FIGS. 29 and 30 are diagram illustrating an example of the cleaningequipment.

FIGS. 31(a), (b) and (c) are diagrams illustrating a rinsing methodusing the cleaning equipment shown in FIGS. 29 and 30.

FIGS. 32(a) and (b) is a diagram illustrating a modification of thecleaning equipment shown in FIGS. 29 and 30.

FIGS. 33(a) and (b) are diagrams illustrating another embodiment of thecleaning equipment.

FIGS. 34(a) and (b) are diagram illustrating a rinsing method using thecleaning equipment shown in FIGS. 33(a) and (b).

FIG. 35 is a diagram illustrating an example of the cleaning bath.

FIG. 36 is a diagram illustrating a state where the cleaning liquid isjetted in the cleaning bath shown in FIG. 35.

FIG. 37 is a diagram illustrating an example of the cleaning bath.

FIG. 38 is a diagram illustrating streams formed on the surface of thecleaning liquid in the cleaning bath shown in FIG. 37.

FIG. 39 is a diagram illustrating an example of the cleaning bath.

FIGS. 40, 41 and 42 are diagrams illustrating another embodiment of therinsing method.

FIG. 43 is a diagram illustrating another example of the cleaning bath.

FIG. 44 is a diagram illustrating another embodiment of the cleaningequipment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will now be given, with reference to FIG. 8, of theprinciple of a method for rinsing a plate-shaped articles according tothe present invention.

Referring to FIG. 8, a cleaning bath 1 is filled with cleaning liquid,and the cleaning liquid 2 flows out from the cleaning bath 1 through anoverflowing surface So positioned at an upper portion of the cleaningbath 1. When the cleaning liquid 2 flows out from the cleaning bath 1,streams are formed on the surface of the cleaning liquid 2 so as tomostly go away from a plane S1 which is approximately perpendicular tothe overflowing surface So. While the cleaning liquid 2 flows out fromthe cleaning bath 1 through the overflowing surface So, a plate-shapedarticle 3 is brought into the cleaning liquid 2 in a state where theplate-shaped article 3 intersects the plane S1 and the surfaces of theplate-shaped article 3 are approximately parallel to the streams mostlybeing directed away from the plane S1 on the surface of the cleaningliquid 2.

For example, when the surface of the cleaning liquid 2 bulges along anintersection line 1 which is a line formed by the intersection of theoverflowing surface So and the plane S1, streams mostly being directedaway from the plane S1 are formed on the surface of the cleaning liquid2.

When the plate-shaped article 3 is brought into the cleaning liquid 2 inthe above manner, particles on the surfaces of the plate-shaped article3 are rinsed therefrom and flow on the streams formed on the surface ofthe cleaning liquid 2. The particles then flow out through theoverflowing surface So along with the cleaning liquid 2. That is, theparticles rapidly flow out from the cleaning bath 1. Thus, a time forwhich the particles float and stay on the surface of the cleaning liquid2 can be shortened.

A description will now be given of an embodiment of the presentinvention.

A cleaning equipment according to the embodiment of the presentinvention is basically formed as shown in FIG. 9. Referring to FIG. 9, acleaning bath 20 has an opening surface So at the top thereof. A bottomsurface opposite to the opening surface So is provided with a feed pipe12. A first end 12a of the feed pipe 12 is closed and is in contact witha side wall 20a of the cleaning bath 20. The feed pipe 12 projects froma side wall 20b opposite to the side wall 20a which is in contact thefirst end 12a of the feed pipe 12. A second end of the feed pipe isconnected to a cleaner supply mechanism (not shown). A plurality oforifices 13 are formed on the feed pipe at predetermined intervals so asto face the open surface So of the cleaning bath 20. The feed pipe 12 islocated in the middle between a front wall 20c of the cleaning bath 20and a rear wall 20d thereof.

A plurality of semiconductor wafers 10 which are plate-shaped articlesto be rinsed are supported by a robot hanger 5 so as to be arranged atpredetermined intervals. The robot hanger 5 is coupled to a liftmechanism (not shown) so that the robot hanger 5 is brought into thecleaning bath 20 through the opening surface So thereof and is lifted upfrom the inside to the outside of the cleaning bath 20.

When the cleaning liquid, such as a pure water, (hereinafter referred toas a cleaning water) is supplied from the cleaner supply mechanism tothe feed pipe 12, the cleaning water is jetted from the orifices 13.After the cleaning bath 20 is filled with the cleaning water, thecleaning water 100 flows out from the cleaning bath 20 through theopening surface So (an overflowing surface) as shown in FIG. 10. In thecleaning water 100, streams directed upward from the respective orifices13 of the feed pipe 12 are formed. The jetting pressure of the cleaningwater 100 jetted from the orifices 13 is controlled by the cleanersupply mechanism so that a part of the surface of the cleaning water 100opposite to the feed pipe 12 bulges as shown in FIG. 11. That is, thesurface of the cleaning water 100 bulges along an intersection line 1which is a line formed by the intersection of the opening surface So anda plane S1 including the feed pipe 12 and being perpendicular to theopening surface So. The diameters of the orifices 13 are adjusted sothat the jetting pressures of the cleaning water 100 at all the orifices13 are uniform. When the surface of the cleaning water 100 bulges alongthe intersection line 1, due to the bulging of the surface of thecleaning water 100, streams being directed away from the plane S1 areformed on the surface of the cleaning water 100 as shown in FIGS. 10 and11.

In the above state, the semiconductor wafers 10 supported by the robothanger 5 are gradually brought into the cleaning water 100 as shown inFIGS. 12 and 13. Here, each of the semiconductor wafers 10 is broughtinto the cleaning water 100 maintaining a state where a lower edgesupported by the hanger arm 5b passes through the moving up part of thecleaning water 100 and the surfaces of each of the semiconductor wafers10 are approximately parallel to the streams mostly being directed awayfrom the plane S1. At this time, first, the lower edge of each of thesemiconductor wafers 10 which edge is supported by the hanger arm 5b isbrought into contact with the surface of the moving up part of thecleaning water 100. Particles P generated by the friction of the hangerarm 5b and each of the semiconductor wafers 10 thus float and flow onthe surface of the cleaning water 100 with the streams as shown in FIG.11. That is, the particles P go away from the hanger arm 5b in adirection approximately parallel to the surfaces of each of thesemiconductor wafers 10 and flow out from the cleaning bath 20 with thecleaning water 100. The semiconductor wafers 10 further sink into thecleaning water 100, and side edges of each of the semiconductor wafers10 which edges are supported by the hanger arms 5a and 5c reach thesurface of the cleaning water 100. Particles P generated by the frictionof the hanger arms 5a and 5c and the semiconductor wafers 10 flow withthe streams formed on the surface of the cleaning water 100 and flow outfrom the cleaning bath 20, in the same manner as described above. Thesemiconductor wafers 10 are then completely immersed in the cleaningwater 100 as shown in FIG. 14. In this state, chemicals and otherparticles remaining on the surfaces of the semiconductor wafers 10 arerinsed from the semiconductor wafers 10 for a predetermined period oftime. After the rinsing of the semiconductor wafers 10 is completed, thesemiconductor wafers 10 are lifted up by the robot hanger 5 from theinside of the cleaning bath 20 to the outside thereof. At this time,there are almost no particles P floating on the surface of the cleaningwater 100. Thus, when the semiconductor wafers 10 are lifted up, thereare almost no particles adhering to the surfaces of each of thesemiconductor wafers 10.

When the semiconductor wafers 10 are brought into and immersed in thecleaning water 100 in the above manner, the chemicals, other dust,impurities and the like are also rinsed from the surfaces of each of thesemiconductor wafers 10. These undesired particles flow out of thecleaning bath 20 with the streams formed on the surface of the cleaningwater 100.

According to the above embodiment, while the semiconductor wafers 10 arebeing brought into the cleaning water 100, the particles P rinsed fromthe surfaces of each of the semiconductor wafers 10 flow the streams onthe surface of the cleaning water 100 so as to mostly be directed awayfrom the semiconductor wafers 10 in directions roughly parallel to thestreams. The particles then flow out from the cleaning bath 20 togetherwith the streams formed on the surface of the cleaning water 100. As aresult, the number of particles floating on the surface of the cleaningwater 100 drastically decreases and there are almost no particlesadhered to the surfaces of each of the semiconductor wafers 10 liftedup.

In the above rinsing method of the semiconductor wafers 10, it isnecessary to stably maintain a state where a part of the surface of thecleaning water 100 bulges so as to form uniform streams on the surfaceof the cleaning water 100. For this reason, it is preferred that thecleaning water 100 be jetted from the articles 13 of the feed pipe 12upward so as to reach the surface of the cleaning water 100 withextension (to diffuse so as to travel not in a straight state) as smallas possible.

Examples of a mechanism for jetting the cleaning water upward withextension as small as possible will be described below.

A first example of the mechanism is shown in FIG. 15. Referring to FIG.15, a straightening unit 15 is mounted on the feed pipe 12 so as tocover the orifices 13. The straightening unit 15 is formed of a firststraightening plate 15a and a second straightening plate 15b. The spacebetween the first and second straightening plates 15a and 15b decreasesin accordance with a distance from the orifices 13 of the feed pipe 12.Tip end portions of the first and second straightening plates 15a and15b are parallel to each other so that a slit 16 is formed at the tipend of the straightening unit 15.

In the above case where the straightening unit 15 is provided on thefeed pipe 12, even if the cleaning water 100 is jetted from the orifices13 with extension, the cleaning water 100 are guided upward by the firstand second straightening plates 15a and 15b. As a result, the cleaningwater 100 is jetted in a straight fashion from the slit 16 of thestraightening unit 15 toward the surface of the cleaning water 100. Inthis case, as the streams of the cleaning water 100 jetted from theorifices 13 is regulated by the slit 16 of the straightening unit 16,the cleaning water 100 jetted from the slit 16 reaches the surface ofthe cleaning water 100 without extension. Thus, it is possible to stablymaintain the state where a part of the surface opposite to the feed pipe12 bulges.

A second example of the mechanism is shown in FIGS. 16(a), (b) and (c).Referring to FIGS. 16(a), (b) and (c), plates 17a and 17b are providedabove the feed pipe 12 so that a slit 18 between the plates 17a and 17bfaces the feed pipe 12. The plates 17a and 17b are fixed on walls of thecleaning bath 20 so that the distance between the feed pipe 12 and theslit 18 is maintained at a predetermined value. In the second example,the cleaning water 100 jetted from the orifices 13 of the feed pipe 12is regulated by the slit 18. As a result, the cleaning water 100 passesthrough the slit 18 and reaches the surface of the cleaning water 100without extension in the same manner as in the first example.

A third example of the mechanism is shown in FIGS. 17(a) and (b).Referring to FIGS. 17(a) and (b), plates 19a and 19b are provided abovethe feed pipe 12 in the same manner as the plates 17a and 17b in theabove second example. Straightening plates 25a and 25b are mounted onedges of the plates 19a and 19b which edges face each other. Thestraightening plates 25a and 25b are arranged parallel to each other sothat a slit 26 is formed between the straightening plates 25a and 25b.The slit 26 faces the feed pipe 12. In the third example, due to thestraightening plates 25a and 25b, the extension of the cleaning water100 ejected from the slit 26 is smaller than the extension thereof inthe above second example shown in FIGS. 16(a), (b) and (c).

A fourth example of the mechanism is shown in FIGS. 18(a) and (b).Referring to FIGS. 18(a) and (b), a plate 27 is provided above the feedpipe 12. A slit 28 is formed on the plate 27 so as to face the feed pipe12. The plate 27 is fixed on the walls of the cleaning bath 20. In thefourth example, the cleaning water 100 jetted from the slit 28 reachesthe surface of the cleaning water 100 without extension in the samemanner as in the second example.

A fifth example of the mechanism is shown in FIGS. 19(a) and (b).Referring to FIGS. 19(a) and (b), the feed pipe 12 is housed in acylindrical straightening unit 29. Plates 30a and 30b are mounted on anupper portion of the cylindrical straightening unit 29 so as to beparallel to each other. A slit 31 is formed between the plates 30a and30b. The slit 31 faces the orifices 13 of the feed pipe 12. In the fifthexample, the cleaning water 100 jetted from the orifices 13 is guidedtoward the slit 31 by the inner surface of a wall of the straighteningunit 29 and is uniformly jetted from the slit 31 toward the surface ofthe cleaning water 100.

The first end 12a of the feed pipe 12 is closed. Thus, in a case wherediameters of the orifices 13 are the same, even if the cleaning water100 is supplied to the feed pipe 12 at a constant pressure, the closerto the first end 12a, the bigger the jetting pressure of the cleaningwater 100 that is ejected from the orifices 13. Thus, in the aboveembodiment, the diameters of the orifices 13 of the feed pipe 12 areadjusted so that the uniform jetting pressure of the cleaning water 13is obtained. However, in a case where the diameters of many orifices 13differ from each other, the man-hour required for producing the feedpipe 12 increases.

A description will now be given, with reference to FIGS. 20, 21 and 22,of examples of a jetting mechanism eliminating the above disadvantage.

A first example of the jetting mechanism is shown in FIG. 20. Referringto FIG. 20, a first feed pipe 35 and a second feed pipe 36 are providedon the bottom surface of the cleaning bath 20. The first feed pipe 36passes through the side wall 20b of the cleaning bath 20 and connectedto the cleaner supply mechanism. The second feed pipe 36 passes throughthe side wall 20a opposite to the side wall 20b and is connected to thecleaner supply mechanism. The first feed pipe 35 is formed of a mainpipe 35a and a plurality of branch pipes 35b(1)-35b(9) (in this case,nine branch pipes are provided). The main pipe 35a is arranged parallelto the rear wall 20d of the cleaning bath 20. The branch pipes35b(1)-35b(9) connected to the main pipe 35a are arranged atpredetermined intervals and extend in a direction perpendicular to themain pipe 35a and parallel to the bottom surface of the cleaning bath20. Ends of the respective branch pipes 35b(1)-35b(9) are closed.Orifices 13 are formed on the branch pipes 35b(1)-35b(9) at positionsnear to the ends thereof. The second feed pipe 36 is formed of a mainpipe 36a and a plurality of branch pipes 36b(1)-36b(9) in the samemanner as the first feed pipe 35. The main pipe 36b of the second feedpipe 36 is arranged parallel to the front surface 20c of the cleaningbath 20. The branch pipes 36b(1)-36b(9) are arranged at predeterminedintervals and connected to the main pipe 36a in the same manner as thebranch pipes 35b(1)-35b(9) of the first feed pipe 35. Ends of the branchpipes 36b(1)-36b(9) are also closed, and orifices 13 are formed on thebranch pipes 36b(1)-36b(9) at positions near to the ends thereof. Thebranch pipes 35b(1)-35b(9) of the first feed pipe 35 and the branchpipes 36b(1)-36b(9) of the second feed pipe 36 are alternately arrangedso that the orifices 13 on the branch pipes 35b(1)-35b(9) and36b(1)-36b(9) are on a line parallel to both the main pipes 35a and 36a.

According to the above jetting mechanism, all the orifices 13 are formedat positions near to the ends of the branch pipes 35b(1)-35b(9) and36b(1)-36b(9) and far from the main pipes 35a and 36a. Thus, pressuresin branch pipes hardly affect each other, so that jetting pressures ofthe cleaning water 100 jetted from the orifices 13 do not much differfrom each other. In addition, the main pipes 35a and 36a of the firstand second feed pipes 35 and 36 are provided with the cleaning water inopposite directions. Thus, even if the jetting pressure varies inaccordance with positions of the orifices 13, the pressure distributionin accordance with positions on the first feed pipe 35 is opposite tothat in accordance with positions on the second feed pipe 36. As thebranch pipes 35b(1)-35b(9) of the first feed pipe 35 and the branchpipes 36(1)-36(9) of the second feed pipe 36 are alternately arranged,the pressure distributions of the first and second feed pipes 35 and 36compensate for each other. As a result, the pressure of streams flowingtoward the surface of the cleaning water 100 is almost uniform.

A second example of the jetting mechanism is shown in FIG. 21. Referringto FIG. 21, a first feed pipe 37 formed of a main pipe 37a and aplurality of branch pipes 37b(1)-37b(7) and a second feed pipe 38 formedof a main pipe 38b and a plurality of branch pipes 38b(1)-38b(7) areprovided on the bottom surface of the cleaning bath 20 in almost thesame as those in the above first example. The branch pipes 37b(1)-37b(7)of the first feed pipe 37 and the branch pipes 38b(1)-38b(7) of thesecond feed pipe 38 are alternately arranged in the same manner as thosein the first example. Ends of the branch pipes 37b(1)-37b(7) and38b(1)-38b(7) are closed. Orifices 13 are formed on each of the branchpipes 37b(1)-137b(7) and 38b(1)-38b(7) so as to be arranged from aposition in the middle between the front and rear walls 20c and 20dtoward the main pipes 37a and 38a. The orifices 13 formed at thefarthest position from the main pipes 37a and 38a are arranged on a lineparallel to both the main pipe 37a and 38a.

In the second example, the same advantages as in the first example areobtained and the following advantages are also obtained.

The orifices 13 positioned on the line in the middle between the frontand rear walls 20c and 20d of the cleaning bath 20 are closest to theends of the branch pipes 37b(1)-37b(7) and 38b(1)-38b(7). Thus, thelargest jetting pressures are obtained at the orifices 13 positioned onthe line in the middle between the front and rear walls 20c and 20d. Ineach of the branch pipes 37b(1)-37b(7) and 38b(1)-38b(7), the jettingpressure of the cleaning water 100 jetted from the orifice 13 far fromthe position in the middle between the front and rear walls 20c and 20dis small, as shown in FIG. 22. According to the pressure distribution asshown in FIG. 22, it is possible to cause the surface of the cleaningwater 100 in the middle between the front and rear walls 20c and 20d ofthe cleaning bath 20 stably move up.

A description will now be given, with reference to FIGS. 23, 24 and 25,of another embodiment of the cleaning bath of the semiconductor wafers.

Referring to FIG. 23, the bottom surface of the cleaning bath 20 isprovided with a jetting unit 40 for jetting the cleaning water. Thejetting unit 40 comprises an inlet block 41a, an outlet block 41b and aplurality of feed pipes 41 provided between the inlet block 41a and theoutlet block 41b and connected thereto. Each of the feed pipes 42 isarranged in parallel to the front and rear walls 20c and 20d of thecleaning bath 20. Orifices 43 are formed on each of the feed pipes 42 soas to be arranged at predetermined intervals. The inlet block 41a isconnected with a pipe 45 and the cleaning water having a predeterminedpressure is supplied from the cleaner supply mechanism (not shown) tothe inlet block 41a via the pipe 45. The inlet block 41a is connected toeach of the feed pipes 42 via a control valve. The inlet block 41a isprovided with control screws 44a each of which is used for controlling acorresponding control valve. The outlet block 41b and each of the feedpipes 42 are also connected to each other via a control valve. Theoutlet block 41b is provided with control screws 44b each of which isused for controlling a corresponding control valve. The outlet block 41bis connected to a pipe 46. The cleaning water ejected from the outletblock 41b is returned to the cleaner supply mechanism via the pipe 46.

In the cleaning bath 20 provided with the above jetting unit 40, thecontrol screws 44a and 44b provided on the inlet block 41a and theoutlet block 41b so that jetting pressure distribution within a planeperpendicular to a direction in which the feed pipes 42 extend becomes anormal distribution as shown in FIG. 24. That is, the cleaning water isjetted from a feed pipe positioned in the middle of the feed pipes 42with the largest jetting pressure, and the further distance from thefeed pipe positioned in the middle of the feed pipes 42, the smaller thejetting pressure of the cleaning liquid jetted by the feed pipes 42. Thediameters of the orifices 13 of each of the feed pipes 42 are adjustedso that the jetting pressures are uniform in a direction parallel toeach of the feed pipes 42. As a result, a jetting pressure distributionis formed as shown in FIG. 25 in the cleaning bath 20. Due to thejetting pressure distribution as shown in FIG. 25, the surface of thecleaning water 100 in the cleaning bath 20 bulges as shown in FIGS. 11and 12. Thus, stable upward moving streams near the front and rear walls20c and 20d are formed on the surface of the cleaning water in thecleaning bath 20.

The semiconductor wafers 10 are brought into the cleaning water havingthe above jetting pressure distribution in a state where the surfaces ofeach of the semiconductor wafers 10 are perpendicular to a direction inwhich the feed pipes 42 extend (see FIGS. 11, 12, 13 and 14).

FIG. 26 shows another example of the jetting mechanism of the cleaningliquid.

Referring to FIG. 26, a first feed pipe unit 70 has a space formed inthe middle thereof. A second feed pipe unit 72 is provided in the spaceof the first feed pipe unit 70. The first and second feed pipe units 70and 72 are provided over the bottom surface of a cleaning bath. Thefirst feed pipe unit 70 has a plurality of pipes 70a connected to eachother in parallel. The second feed pipe unit 72 has three pipes 72aconnected to each other in parallel. A plurality of orifices 71 and 73are formed on each of the pipes 70a and 72a so as to be arranged atpredetermined intervals. Each of the pipes 72a of the second pipe unit72 is provided with a straightening device 74. The straightening device74 has an opening surface 76 facing the orifices 73 arranged in a lineon each pipe 72a as shown in FIGS. 27(a) and (b). Supporting projections75 are formed on both ends of the straightening device 74. Thesupporting projections 75 are in contact with each pipe 72a and slits 78are formed between both the side surface of the straightening device 74and the surface of each pipe 72a. The height (a) of the straighteningdevice 74 is about few tens millimeters and the width (b) thereof isabout a few millimeters.

In the above jetting mechanism, the cleaning liquid jetted from theorifices 73 of each pipe 72a is guided by the straightening device 74and is jetted from the opening surface 76 upward. Due to the cleaningliquid jetted from the opening surface 76 of the straightening device74, the cleaning liquid in the cleaning bath is pulled into thestraightening device 74 through the slits 78 formed on the side surfacesthereof, as shown in FIG. 28. As a result, the jetting force of thecleaning liquid jetted from the straightening device is amplified. Thus,the cleaning liquid jetted from each pipe 72a is propelled upward so asto stably make the surface thereof bulge.

In a state where the cleaning liquid is supplied to the second feed pipeunit 72 so that the surface of the cleaning liquid bulges as shown inFIG. 11, the semiconductor wafers 10 are gradually carried into thecleaning liquid. After the semiconductor wafers are completely immersedin the cleaning liquid, the cleaning liquid is supplied to the firstfeed pipe 70 and the semiconductor wafers are rinsed. When the cleaningliquid is supplied to the first feed pipe 70, the supply of the cleaningliquid to the second feed pipe 72 may be stopped.

A description will now be given of embodiments of the cleaningequipment.

FIG. 29 shows the cleaning equipment according to a first embodiment ofthe present invention. Referring to FIG. 29, a feed pipe unit 80 havinga plurality of pipes 82a is provided on the bottom surface of thecleaning bath 20. The cleaning bath 20 is provided with a moving feedpipe 84 positioned, in an initial state, above the feed pipe unit 82 andin the middle between the front and rear walls 20c and 20d of thecleaning bath 20. The moving feed pipe 84 crosses over the side wall 20aand is fixed on a carriage 86. The carriage 86 is mounted with a motor,and can be moved on a rail 94 by the motor. The rail 94 extends in ahorizontal direction along the side wall 20c. The feed pipe unit 82 isconnected to the cleaner supply mechanism and the moving feed pipe 84 isalso connected to the cleaner supply mechanism via a flexible hose 85. Aplurality of orifices arranged in a line at predetermined intervals areformed on each of the pipes 82a and 84. The hanger 5 supporting aplurality of semiconductor wafers in one lot is fixed on a carriage 92.The carriage 92 is mounted with a motor and can be moved by the motor ona rail 90 extending in a horizontal direction and a vertical direction.The motor mounted on the carriage 86 on which the moving feed pipe 84and the motor mounted on the carriage 92 on which the hanger 5 is fixedare controlled so as to be operated in synchronism with each other.

The semiconductor wafers are rinsed using the above cleaning equipmentas follows.

First, the cleaning bath 20 is filled with the cleaning liquid 100. Thecleaning liquid is then jetted from the orifices of the moving feed pipe84 positioned at the initial position as shown in FIG. 29. Due to thejetting of the cleaning liquid from the moving feed pipe 84, the middlepart of the surface of the cleaning liquid 100 bulges along a directionin which the moving feed pipe 84 extends (see FIG. 31(a)). At this time,streams are formed on the surface of the cleaning liquid 100 so as to bedirected away from the bulging middle part of the surface of thecleaning liquid 100 to both the front and rear walls 20c and 20d. Inthis state, the carriage 92 on which the hanger 5 is fixed goes down onthe rail 90 extending in the vertical direction, so that thesemiconductor wafers 10 supported by the hanger 5 is carried into thecleaning liquid 100 (see FIG. 31(b)). In a process until the hanger arms5a and 5c supporting the side edges of the semiconductor wafers 10 arecarried into the cleaning liquid 100 after the hanger arm 5b supportingthe lower edges of the semiconductor wafers 10 is carried into thecleaning liquid 100, particles on the hanger arms 5a, 5b and 5c flow outfrom the cleaning bath with the stream formed on the surface of thecleaning liquid, in the same manner as described above. After this, thecleaning liquid 100 starts being jetted from the orifices of the feedpipe unit 82 and the supply of the cleaning liquid 100 to the movingfeed pipe 84 is stopped. The carriage 86 on which the moving feed pipe84 is fixed moves on the rail 94 in synchronism with the moving of thecarriage 92, on which the hanger 5 is fixed, downward. That is, whilethe semiconductor wafers 10 are going down, the moving pipe 84 movestoward the rear wall 20d of the cleaning bath 20 (see FIG. 31(c)). Whenthe carriage 92 on which the hanger 5 further goes down and reaches thebottom position, the semiconductor wafers 10 are completely immersed inthe cleaning liquid 100 as shown in FIG. 30, and are rinsed.

In the above cleaning equipment, until the particles are removed fromthe semiconductor wafers 10, the cleaning liquid 100 is jetted from themoving feed pipe 84 above the feed pipe unit 82. That is, in the statethe surface of the cleaning liquid stably bulges, the particles areremoved from the semiconductor wafers 10. Thus, the particles removedfrom the semiconductor wafers 10 immediately flow out from the cleaningbath 20 with the stream formed on the surface of the cleaning liquid100.

The moving feed pipe 84 may be divided into a first moving pipe 84a anda second moving pipe 84b as shown in FIG. 32(a). In this case, the firstmoving pipe 84a and the second moving pipe 84b are respectivelyseparated and move toward the rear wall 20d and the front wall 20c, asshown in FIG. 32(b).

FIGS. 33(a) and (b) and FIGS. 34(a) and (b) show the cleaning equipmentaccording to a second embodiment of the present invention.

Referring to FIGS. 33(a) and (b), a feed pipe unit 96 is supported by asupporting arm 95 connected to a lifter mechanism (not shown). Aplurality of orifices 97 are formed on each pipe of the feed pipe unit96 so as to be arranged in predetermined intervals. The feed pipe unit96 is positioned at an initial position near the opening surface So ofthe cleaning bath 20. The feed pipe unit 96 is provided with thecleaning liquid 100 from the cleaner supply mechanism via a flexiblehose 96a. The hanger 5 supporting the semiconductor wafers 10 is fixedon a lifter mechanism. This lifter mechanism operates in synchronismwith the lifter mechanism on which the feed pipe unit is fixed. Thecleaning liquid 100 filling the cleaning bath 20 is gradually ejectedvia an ejection pipe 98.

In the above cleaning equipment, in a state where the cleaning bath isfilled with the cleaning liquid 100, the cleaning liquid 100 is jettedfrom the feed pipe unit 96 positioned at the initial position as shownin FIG. 34(a). At this time, as the feed pipe unit 96 is near theopening surface So of the cleaning bath 20, the surface of the cleaningliquid stably bulges. The lifter on which the feed pipe unit 96 is fixedand the lifter on which the hanger 6 supporting the semiconductor wafers10 is fixed go down in synchronism with each other. As a result, thesemiconductor wafers 10 are gradually carried into the cleaning liquid100. When the feed pipe unit 96 reaches the bottom position, thesemiconductor wafers 10 are completely immersed in the cleaning liquid100 as shown FIG. 34(b). In this state, the semiconductor wafers 10 arerinsed.

FIG. 35 shows another embodiment of the cleaning bath.

Referring to FIG. 35, inner surfaces of the front and rear walls 20c and20d of the cleaning bath 20 are respectively provided with feed pipes 51and 52. The feed pipes 51 and 52 are positioned near a center betweenthe bottom surface of the cleaning bath 20 and the opening surface Sothereof, and are approximately parallel to each other. Orifices 53 areformed on each of the feed pipes 51 and 52 so as to be arranged atpredetermined intervals. The feed pipes 51 and 52 are adjusted so thatthe orifices 53 face the center line of the opening surface So whichline is parallel to the front and rear walls 20c and 20d.

When the cleaning water 100 is supplied to the feed pipes 51 and 52, thecleaning water 100 is jetted from the orifices 53 of both the feed pipes51 and 52 toward the center line of the opening surface So. The jettingpressure of the cleaning water 100 from the orifices 53 is controlled sothat the surface of the cleaning water 100 bulges along the center lineof the opening surface So as shown in FIG. 36. In this state, thesemiconductor wafers 10 are brought into the cleaning water 100 from theposition at which the surface of the cleaning water 100 bulges in thesame manner as in the above case. Thus, while the semiconductor wafers10 is being brought into the cleaning water 100, particles on thesurfaces of each of the semiconductor wafers 10 flow out from thecleaning bath 20 with the stream formed on the surface of the cleaningwater 100.

A description will now be given, with reference to FIGS. 37, 38 and 39,of examples of the cleaning bath in which streams are further stablyformed on the surface of the cleaning water.

A first example is shown in FIGS. 37 and 38. Referring to FIG. 37, thefront and rear walls 20c of the cleaning bath 20 and 20d are lower thanthe side walls 20a and 20b thereof. Due to this structure of thecleaning bath 20, the cleaning water 100 does not flow out over the sidewalls 20a and 20b. Thus, when the surface of the cleaning water 100bulges along the intersection line 1 formed by the intersection of theopening surface So and the plane S1 including the feed pipe 12 andperpendicular to the opening surface So, the streams mostly beingdirected away from the plane S1 are stably formed on the surface of thecleaning liquid 100 extending from the side wall 20a and the side wall20d opposite thereto, as shown in FIG. 37. As a result, the probabilitythat the particles floating on the surface of the cleaning liquid 100adhere to the surfaces of each of the semiconductor wafers 10 furtherdecreases.

A second example is shown in FIG. 39. Referring to FIG. 39, grooves 48are formed on tops of the front and rear walls 20c and 20d of thecleaning bath 20. In the second example, the cleaning water 100 flowsout from the cleaning bath 20 mostly through the grooves 48 of the frontand rear walls 20c and 20d. Thus, the stable stream being directed awayfrom the plane S1 is formed in almost the same manner as the firstexample.

A description will now be given, with reference to FIGS. 40, 41 and 42,of a rinsing method according to another embodiment of the presentinvention.

FIG. 40 shows an outline of a structure of a cleaning equipment used inthe rinsing method according to the present invention. Referring to FIG.40, a partition plate 64 is provided in the cleaning bath 20 at apredetermined position above the bottom surface of the cleaning bath 20.The partition plate 64 is provided with many orifices 63 formed thereon.The side wall 20a of the cleaning bath 20 is connected with a supplyingpipe 62 so that the cleaning water 100 is supplied via the supplyingpipe 62 to a space between the partition plate 64 and the bottom surfaceof the cleaning bath 20. The cleaning water 100 supplied to the spaceunder the partition plate 64 is jetted upward from the respectiveorifices 63. The cleaning water 100 fills the cleaning bath 20 and flowsout therefrom through the opening surface So. The front wall 20c has afirst folding wall 20c(1) and a second folding wall 20c(2) both of whichare formed of an upper side of the front wall 20c. The first foldingwall 20c(1) is connected to the second folding wall 20c(2) so as to beable to be folded about a borderline between the first and secondfolding walls 20c(1) and 20c(2). The second folding wall 20c(2) isconnected to the remaining part of the front wall 20c so as to be ableto be folded about a borderline between the second folding wall 20c(2)and the remaining part of the front wall 20. The rear wall 20d has afirst folding wall 20d(1) and a second folding wall 20d(2) both of whichare able to be folded in the same manner as those of the front wall 20c.

The cleaning bath 10 having the above structure is filled with thecleaning water 100 and the cleaning water 100 flows out from thecleaning bath 20 through the opening surface So (the overflowingsurface). In this state, the semiconductor wafers 10 supported by therespective hanger arms 5a, 5b and 5c of the robot hanger 5 are graduallylifted down. Then, immediately before the hanger arm 5b supporting thelower edge of each of the semiconductor wafers 10 reaches the surface ofthe cleaning water 100 in the cleaning bath 20, the first folding walls20c(1) and 20d(1) of the front and rear walls 20c and 20d are folded, asshown in FIG. 41. The overflowing surface of the cleaning bath 20 thengoes down from the initial opening surface So to an opening surface So1depending on positions at which the first folding walls 20c(1) and20d(1) are folded. Thus, uniform streams being directed toward the frontand rear walls 20c and 20d are formed on the surface of the cleaningwater 100. While the state where the uniform streams being directedtoward the front and rear walls 20c and 20d are formed is maintained,the semiconductor wafers 10 are gradually brought into the cleaningwater 100. During this, the particles collected on regions in which thehanger arm 5b and the semiconductor wafers are in contact with eachother flow out together with the streams formed on the surface of thecleaning water 100 from the cleaning bath 20 through the opening surfaceSo1. The cleaning water 100 flows out from the cleaning bath 20 and thesurface of the cleaning water 100 gradually goes down. When the surfaceof the cleaning water 100 reaches the opening surface So1, the streamsformed on the surface of the cleaning water 100 are in almost the samestate as those in the initial state shown in FIG. 40. The semiconductorwafers 10 further sink into the cleaning water 100. Then, immediatelybefore the hanger arms 5a and 5c supporting the side edges of thesemiconductor wafers 10 reach the surface of the cleaning water 100, thesecond folding walls 20c(2) and 20d(2) of the front and rear walls 20cand 20d as shown in FIG. 42. The overflowing surface of the cleaningbath 20 then further goes down from the opening surface So1 to anopening surface So2 depending on positions at which the second foldingwalls 20c(2) and 20d(2) are folded. Thus, uniform streams being directedtoward the front and rear walls 20c and 20d are formed on the surface ofthe cleaning water 100 again. While the streams being directed towardthe front and rear walls 20c and 20d are formed, the semiconductorwafers 10 are gradually brought into the cleaning water 100. Duringthis, the particles collected on regions in which the hanger arms 5a and5c and the semiconductor wafers 10 are in contact with each other flowout with the stream formed on the surface of the cleaning water 100 fromthe cleaning bath 20 through the opening surface So2. After this, thesemiconductor wafers 10 are completely immersed in the cleaning water100 and rinsed therein.

In the above embodiment, the level of the overflowing surface throughwhich the cleaning water flows out successively goes down. The uniformstreams being directed toward the front and rear walls 20c and 20d areformed on the cleaning water 100 every time the overflowing surface goesdown in one step. Thus, the particles on the surfaces of each of thesemiconductor wafers 10 flow out with the stream from the cleaning bath20, so that most of the particles do not remain on the surface of thecleaning water 100.

Experiments

The semiconductor wafer were rinsed out in accordance with theconventional rinsing method as shown in FIGS. 5 and 6. In this case,there were 862 particles on the surface of the semiconductor waferrinsed out. On the other hand, in a case where the semiconductor waferwas rinsed out in accordance with the rinsing method of the presentinvention as shown in FIGS. 9-14, there were 23 particles on the surfaceof the semiconductor wafer rinsed out.

The present invention can be also applied to the rinse of generalplate-shaped articles, such as masks and perticles used in theproduction process of the semiconductor device and an LCD substrate.

In the cleaning bath as shown in FIG. 43 and the cleaning equipment asshown in FIG. 44, the semiconductor wafers 10 can be rinsed so that theparticles are almost removed from the surfaces of the semiconductorwafers 10 in the same manner as in the above embodiments.

The present invention is not limited to the aforementioned embodiments,and variations and modification may be made without departing from thescope of the claimed invention.

What is claimed is:
 1. A cleaning bath used for rinsing a plate-shapedarticle comprising:a bath having an overflowing surface through which acleaning liquid flows out, said cleaning liquid rinsing saidplate-shaped article immersed within said bath and removed therefromafter having been rinsed; and stream forming unit for forming streams ona surface of the cleaning liquid filling said bath, said streamsdirected away from a predetermined plane approximately perpendicular tothe overflowing surface of said bath, wherein said stream forming unitincludes a straightening mechanism for forming a surface of a cleaningliquid to bulge directly above a location where the cleaning liquid isjetted so that the streams directed away from the predetermined planesubstantially perpendicular to the overflowing surface are formed on thesurface of the cleaning liquid to thereby rinse said plate-shapedarticle immersed within said bath.
 2. The cleaning bath as claimed inclaim 1, wherein the stream forming means comprises:a feed pipe having aplurality of orifices formed so as to be arranged in a line atpredetermined intervals, the cleaning liquid being jetted from said feedpipe through said orifices; and a straightening mechanism, provided soas to face said orifices of said feed pipe, for straightening streams ofthe cleaning liquid jetted through said orifices, and wherein thecleaning liquid jetted through said straightening mechanism makes thesurface of the cleaning liquid bulge, so that the streams directed awayfrom the predetermined plane approximately perpendicular to theoverflowing surface are formed on the surface of the cleaning liquid. 3.The cleaning bath as claimed in claim 2, wherein said straighteningmechanism comprises:a guiding mechanism for guiding the cleaning liquidjetted from said feed pipe through the orifices upward with graduallystraightening streams of the cleaning liquid; and a slit plate unitconnected to said guiding mechanism and having a slit for regulating thecleaning liquid jetted upward.
 4. The cleaning bath as claimed in claim2, wherein said straightening mechanism has a plate member providedabove the feed pipe, a slit being formed on said plate member so as toface said feed pipe.
 5. The cleaning bath as claimed in claim 2, whereinsaid straightening mechanism comprises at least two provided on saidfeed pipe so as to sandwich the orifices arranged in a line on said feedpipe, each of said walls having an opening formed thereon, the cleaningliquid being such into a space between said wall through the openingformed on each of said walls when the cleaning liquid is jetted upwardthrough the space between said walls.
 6. The cleaning bath as claimed inclaim 5, wherein said walls are parts of a rectangular-shaped frameprovided on said feed pipe.
 7. The cleaning bath as claimed in claim 5,wherein the opening formed on each of said walls is a slit formed at alower edge of each of said walls.
 8. The cleaning bath as claimed inclaim 1, wherein said stream forming means comprises:a plurality of feedpipes on each of which pipes a plurality of orifices are formed so as tobe arranged in a line at predetermined intervals, the cleaning liquidbeing jetted from each of said pipes through said orifices; and apressure adjusting mechanism, coupled to each of said feed pipes, foradjusting a jetting pressure of the cleaning liquid jetted from acorresponding feed pipe through the orifices, and wherein the cleaningliquid of which the jetting pressure is adjusted by said pressureadjusting mechanism makes the surface of the cleaning liquid bulge, sothat the streams directed away from the predetermined planeapproximately perpendicular to the overflowing surface are formed on thesurface of the cleaning liquid.
 9. A cleaning equipment for rinsing aplate-shaped article comprising:a cleaning bath including: a bath havingan overflowing surface through which a cleaning liquid flows out, saidcleaning liquid rinsing said plate-shaped article immersed within saidbath and removed therefrom after having been rinsed, and stream formingunit for forming streams on a surface of the cleaning liquid fillingsaid bath, said streams being directed away from a predetermined planealternatively perpendicular to the overflowing surface of said bath; andmeans for bringing the plate-shaped article into the cleaning liquid insaid cleaning bath maintaining a state where said plate-shaped articleintersects the predetermined plane and the surfaces of said plate-shapedarticle are in approximately parallel to the streams formed by saidstream forming unit, wherein said stream forming unit includes astraightening mechanism for forming a surface of a cleaning liquid tobulge directly above a location where the cleaning liquid is jetted sothat the streams directed away from the predetermined planesubstantially perpendicular to the overflowing surface are formed on thesurface of the cleaning liquid to thereby rinse said plate-shapedarticle immersed within said bath.
 10. The cleaning equipment as claimedin claim 9, wherein said stream forming means comprises:a feed pipehaving a plurality of orifices formed so as to be arranged in a line atpredetermined intervals, the cleaning liquid being jetted from said feedpipe through said orifices, and wherein the cleaning liquid jetted fromsaid feed pipe through the orifices upward makes the surface of thecleaning liquid bulge, so that the streams directed away from thepredetermined plane approximately perpendicular to the overflowingsurface are formed on the surface of the cleaning liquid.
 11. Thecleaning equipment as claimed in claim 10, wherein said feed pipe isprovided above a bottom surface of said bath, and wherein said cleaningequipment further comprises a moving mechanism for moving said feed pipeso that said feed pipe avoids said plate-shaped articles carried intothe cleaning liquid.
 12. The cleaning equipment as claimed in claim 11,wherein said moving mechanism has a horizontal moving mechanism formoving said feed pipe in a direction approximately parallel to theoverflowing surface.
 13. The cleaning equipment as claimed in claim 11,wherein said moving mechanism has a vertical moving mechanism for movingsaid feed pipe toward the bottom surface of said bath.